Liquid phase epitaxy growth of GaAs: Si by temperature difference method

Selective-Area Growth of Heavily n–Doped GaAs Nanostubs on Si(001) by Molecular Beam Epitaxy

Growth of InP on GaAs „001... by hydrogen-assisted low-temperature solid-source molecular beam epitaxy

Direct heteroepitaxial growth of InP layers on GaAs 001 wafers has been performed by solid-source molecular beam epitaxy assisted by monoatomic hydrogen H . The epitaxial growth has been carried out using a two-step method: for the initial stage of growth the temperature was as low as 200 °C and different doses of H were used; after this, the growth proceeded without H while the temperature was...

Alloy formation during molecular beam epitaxy growth of Si-doped InAs nanowires on GaAs[111]B

Vertically aligned InAs nanowires (NWs) doped with Si were grown self-assisted by molecular beam epitaxy on GaAs[111]B substrates covered with a thin SiO x layer. Using out-of-plane X-ray diffraction, the influence of Si supply on the growth process and nanostructure formation was studied. It was found that the number of parasitic crystallites grown between the NWs increases with increasing Si ...

Layered Growth of Lattice-Mismatched GaxIn1 xP on GaP Substrates by Liquid Phase Epitaxy

We report layered growth of GaxIn1 xP on GaP substrates using single-step liquid phase epitaxy (LPE) with a Sn-based melt when the lattice mismatch is greater than 0.4 % (x< 0.95). Compositional control was observed by (1) varying the cooling rate and (2) changing the melt-back temperature at the beginning of the growth. Possible growth mechanisms are proposed to explain the principles of both ...

Wirelike Growth of Si on an Au/Si(111) Substrate by Gas Source Molecular Beam Epitaxy

Ultrafine Si nanowires are grown on an Au/Si(111) substrate using gas source molecular beam epitaxy. These Si wires with crosssectional dimensions between 50 nm and 2 μm grow mainly with a growth axis parallel to the <111> direction. The growth rate of nanowires is independent of their diameters, i.e., nanowires with different diameters have the same growth rate. From the dependence of source g...